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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
Thin film
NRP
13C
Annealing
Pulsed laser deposition
Raman spectroscopy
Multilayer
Ferromagnetic resonance
Nuclear reaction analysis
Magnetic anisotropy
Nickel
Nuclear resonance profiling NRP
Transparent conductive oxide TCO
Aluminum
Diffusion
Adsorption
7550Pp
Silica
Indium oxide
27Ald p&α
15N
Gallium oxide
AFM
Passivation
XRD
Atomic Layer Deposition ALD
Energy loss
Acoustic
GaMnAs
ADSORPTION DESORPTION HYSTERESIS
XPS
Zinc oxide
Channeling
PIXE
Adsorbed layers
Epitaxial growth
Al2O3
Topological defects
18O
27Aldp
Aluminium
Metal-insulator transition
Interface defects
Oxygen deficiency
EPR
Periodic multilayer
Gold
27Alda
Magnetic semiconductors
Topological insulators
Oxidation
7630Lh
Ion beam analysis
Acoustic propreties of solid
7550Ee
Silicon Carbide
ALD
Capillary condensation
HfO2
Evaluation
RBS
Adsorption Isotherms
X-ray diffraction
17O
Measurement
Thin films
Nanostructures
Density functional theory
6855Jk
Auger electron spectroscopy AES
18O resonance
Ageing
Ion implantation
Epitaxy
AC susceptibility
Sputtering
Hysteresis
NRA
Photoluminescence
Magnetization curves
2H
17Opp
Alloys
3C-SiC
Silicon
Silicon carbide
Growth
Isotopic Tracing
17Op
Kossel diffraction
Rutherford backscattering spectrometry RBS
Low energy electron diffraction LEED
Nitridation
Pb centers
Charge exchange
SiC
8140Ef
Nanoparticles
Stable isotopic tracing
Defects