Edge Effect on Nanoparticles of an Interconnect Alloy from the ABV Model
Résumé
The physical phenomena underlying crack initiation and hence failures in interconnection alloy is investigated using the ABV model [1] (Metals A and B and void V) focusing on boundary effects at the interface with the device. The Hamiltonian is expressed as the sum of the interaction energies between A, B and V with interaction parameters EAA, EBB, EAB , EAV and EBV and reformulated in terms of fictitious 3 states spins (-1, 0, +1). And new parameters J, K, and U function of the interaction energy parameters between the metal atoms A, B and void V are defined and associated to the different spin combinations of the transformed Hamiltonian. A Monte Carlo (MC) simulation of a 2D microscopic 3 states Ising model taking into account edge effects [2] at the boundary between an active chip in a photovoltaic device or a sensor and nanoparticles of an interconnect alloy is performed. The results are discussed in terms of realistic values of interaction parameters and different algorithms for fixed compositions of A, B and V.
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